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| 2SB1580 / 2SB1316 Transistors Power Transistor (-100V , -2A) 2SB1580 / 2SB1316 Features 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Complements the 2SD2195 / 2SD1980. External dimensions (Unit : mm) 2SB1580 1.0 1.5 0.4 4.0 2.5 0.5 (1) 3.0 0.5 (3) 1.5 0.4 1.5 4.5 1.6 (2) Absolute maximum ratings (Ta = 25C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Symbol VCBO VCEO VEBO IC Limits -100 -100 -8 -2 -3 2 1 10 150 -55 to +150 Unit V V V A(DC) A(Pulse) W W(Tc=25C) C C ROHM : MPT3 EIAJ : SC-62 (1) Base (2) Collector (3) Emitter 2.3 0.65 2SB1580 Collector PC power 2SB1316 dissipation Junction temperature Tj Tstg Storage temperature 1 Single pulse Pw=100ms 2 When mounted on a 40 x 40 x 0.7 mm ceramic board. (1) 2.3 0.9 2 0.75 1 2SB1316 0.4 5.5 1.5 (2) 0.9 (3) 0.5 Packaging specifications and hFE 1.0 Type Package hFE Marking Code Basic ordering unit (pieces) Denotes hFE 2SB1580 MPT3 1k to 10k BN T100 1000 2SB1316 CPT3 1k to 10k - TL 2500 0.5 1.5 2.5 9.5 2.3 0.8Min. 5.1 C0.5 ROHM : CPT3 EIAJ : SC-63 Equivalent circuit C B R1 R1 3.5k R2 300 R2 E B : Base C : Collector E : Emitter Electrical characteristics (Ta = 25C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance Measured using pulse current. Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min. -100 -100 -10 - - - 1000 - - Typ. - - - - - - - 50 35 Max. - - - -10 -3 -1.5 10000 - - Unit V V V A mA V - MHz pF Conditions IC = -50A IC = -5mA IE = -5mA VCB = -100V VEB = -7V IC/IB= -1A/-1mA VCE = -2V , IC = -1A VCE = -5V , IE =0.1A , f = 30MHz VCB = -10V , IE = 0A , f = 1MHz Rev.A 6.5 (1) Base (2) Collector (3) Emitter 1/2 2SB1580 / 2SB1316 Transistors Electrical characteristics curve -2.0 COLLECTOR CURRENT : IC (A) -1mA -0.9mA -0.7mA -1.2 m -0.4 A -1 -0.5 -0.2 -0.1 -0.05 -0.02 -0.01 0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 -2.8 DC CURRENT GAIN : hEF -1.6 -0.8mA COLLECTOR CURRENT : IC (A) A 6m -0. A .5m -0 Ta=25C -10 -5 -2 Ta=25C VCE= -2V 10k 5k 2k 1k 500 200 100 50 20 10 -0.01 -0.02 -0.05 -0.1 -0.2 -0.5 -1 Ta=25C VCE= -2V -0.8 IB= -0.3 mA -0.4 0 0 -1 -2 -3 -4 -5 -2 -5 -10 COLLECTOR TO EMITTER VOLTAGE : VCE (V) BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR CURRENT : IC (A) Fig.1 Grounded emitter output characteristics Fig.2 Grounded emitter propagation characteristics Fig.3 DC current gain vs. collector current COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) -50 -20 -10 -5 -2 -1 -0.5 -0.2 -0.1 -0.05 -0.1 -0.2 -0.5 -1 -2 COLLECTOR OUTPUT CAPACITANCE: Cob (pF) Ta=25C IC / IB =1000 1000 500 200 100 50 20 10 5 2 1 -0.1 -0.2 -0.5 -1 -2 -5 COLLECTOR CURRENT : IC (A) Ta=25C IE=0A f=1MHz 50 20 10 5 2 1 500m 200m 100m 50m 20m 10m 0.2 0.5 1 2 5 10 Ta=25C Single NONREPETITIVE PULSE Ic Max. (Pulse) Pw=10ms DC Pw=100ms -5 -10 -10 -20 -50 -100 20 50 100 200 500 COLLECTOR CURRENT : IC (A) COLLECTOR TO BASE VOLTAGE : VCB (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.4 Collector-emitter saturation voltage vs. collector current Fig.5 Collector output capacitance vs. collector-base voltage Fig.6 Safe Operating area (2SB1580) 50 COLLECTOR CURRENT : IC (A) 20 10 5 2 1 500m 200m 100m 50m 20m 10m Ta=25C Single NONREPETITIVE PULSE Ic Max. (Pulse) Pw=10ms DC Pw=100ms 0.2 0.5 1 2 5 10 20 50 100 200 500 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.7 Safe Operating area (2SB1316) Rev.A 2/2 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1 |
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